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对比文件列表
2004-12-30_发明申请_US20040267134A1 Electric circuit for tuning a capacitive electrostatic transducer_+++B_O_e_h_n_t+++.docx
2026-03-10 19:01
2005-03-17_发明申请_US20050057284A1 Method and apparatus for controlling scanning of mosaic sensor array_+++B_a_c_e_o+++.docx
2026-03-10 19:01
2005-04-07_发明申请_US20050075572A1 Focusing micromachined ultrasonic transducer arrays and related methods of manufacture_+++B_a_c_e_g_l_o_p+++.docx
2026-03-10 19:01
2005-07-07_发明申请_US20050146247A1 Curved micromachined ultrasonic transducer arrays and related methods of manufacture_+++B_c_e_l_m_n_o+++.docx
2026-03-10 19:01
2008-05-29_发明申请_US20080122317A1 MULTI-LAYER TRANSDUCERS WITH ANNULAR CONTACTS_+++B_N_c_d_e_f_g_j_l_m_o_p_q_r_s+++.docx
2026-03-10 19:01
2009-08-13_发明申请_US20090204001A1 ULTRASONIC PROBE AND ULTRASONIC DIAGNOSTIC APPARATUS_+++B_N_a_b_c_d_e_l_m_o+++.docx
2026-03-10 19:01
2010-07-01_发明申请_US20100168583A1 ENHANCED ULTRASOUND IMAGING PROBES USING FLEXURE MODE PIEZOELECTRIC TRANSDUCERS_+++B_C_G_O_a+++.docx
2026-03-10 19:01
2011-08-03_发明公开_CN102143422A 圆形薄膜压电超声换能器_+++B_C_J_O_R_S_a_d_l_p+++.docx
2026-03-10 19:01
2012-06-19_发明授权_US08203912B2 CMUTs with a high-k dielectric_+++A_B_E_G_O_f_j+++.docx
2026-03-10 19:01
2012-07-26_发明申请_US20120188849A1 ULTRASONIC SENSOR AND ELECTRONIC DEVICE_+++A_B_C_D_E_F_G_o_p_t+++.docx
2026-03-10 19:01
2012-08-16_发明申请_US20120206014A1 PIEZOELECTRIC TRANSDUCERS USING MICRO-DOME ARRAYS_+++A_B_C_E_O+++.docx
2026-03-10 19:01
2012-09-27_发明申请_US20120245408A1 METHODS AND SYSTEMS FOR IMPROVING ACTUATOR PERFORMANCE BY REDUCING TENSILE STRESSES IN PIEZOELECTRIC THIN FILMS_+++B_C_D_F_G_L_O_S_a_e_j_p_r+++.docx
2026-03-10 19:01
2013-05-30_发明申请_US20130134838A1 PIEZOELECTRIC MEMS TRANSFORMER_+++B_C_D_F_G_L_M_N_O_e_p+++.docx
2026-03-10 19:01
2013-07-11_发明专利_JP2013135793A Ultrasonic probe and ultrasonic inspection apparatus_+++A_B_C_D_E_F_G_L_M_N_O_P_R_s+++.docx
2026-03-10 19:01
2013-11-07_发明申请_US20130293065A1 ULTRA WIDE BANDWIDTH PIEZOELECTRIC TRANSDUCER ARRAYS_+++B_C_D_E_O_a_b_c_l_m_n_p+++.docx
2026-03-10 19:01
2014-08-07_发明申请_US20140219521A1 BIOMETRIC SENSING DEVICE FOR THREE DIMENSIONAL IMAGING OF SUBCUTANEOUS STRUCTURES EMBEDDED WITHIN FINGER TISSUE_+++A_D_E_b_c_n_p+++.docx
2026-03-10 19:01
2014-08-21_发明申请_US20140232241A1 PIEZOELECTRIC ARRAY EMPLOYING INTEGRATED MEMS SWITCHES_+++B_C_E_L_M_N_O_a_g_t+++.docx
2026-03-10 19:01
2014-12-04_发明申请_US20140354608A1 DEVICES AND METHODS OF SENSING_+++C_D_E_F_a_b_g+++.docx
2026-03-10 19:01
2015-03-26_发明申请_US20150087991A1 APPLICATION SPECIFIC INTEGRATED CIRCUIT WITH COLUMN-ROW-PARALLEL ARCHITECTURE FOR ULTRASONIC IMAGING_+++B_C_O+++.docx
2026-03-10 19:01
2015-06-18_发明申请_US20150165479A1 PIEZOELECTRIC ULTRASONIC TRANSDUCER AND PROCESS_+++B_C+++.docx
2026-03-10 19:01
2015-06-18_发明申请_US20150169136A1 MICROMECHANICAL ULTRASONIC TRANSDUCERS AND DISPLAY_+++B_C_a_e_o+++.docx
2026-03-10 19:01
2015-06-18_发明申请_WO2015086413A1 MONOLITHICALLY INTEGRATED THREE ELECTRODE CMUT DEVICE_+++B_E_O+++.docx
2026-03-10 19:01
2016-04-21_发明申请_US20160107194A1 THREE-PORT PIEZOELECTRIC ULTRASONIC TRANSDUCER_+++A_B_C_D_E_F_G_H_I_J_K_L_M_N_O_P_Q_R_S_T+++.docx
2026-03-10 19:01
2016-04-21_发明申请_WO2016061406A1 SUPERPIXEL ARRAY OF PIEZOELECTRIC ULTRASONIC TRANSDUCERS FOR 2-D BEAMFORMING_+++A_B_C_D_E_G_H_I_f_l_m_o+++.docx
2026-03-10 19:01
2016-04-21_发明申请_WO2016061410A1 THREE-PORT PIEZOELECTRIC ULTRASONIC TRANSDUCER_+++A_B_C_D_E_F_G_H_I_J_K_L_M_N_O_P_Q_R_S_T+++.docx
2026-03-10 19:01
2016-04-21_发明申请_WO2016061412A1 ACTIVE BEAM-FORMING TECHNIQUE FOR PIEZOELECTRIC ULTRASONIC TRANSDUCER ARRAY_+++B_C_O+++.docx
2026-03-10 19:01
2016-05-12_发明申请_US20160131747A1 ACTIVE BEAM-FORMING TECHNIQUE FOR PIEZOELECTRIC ULTRASONIC TRANSDUCER ARRAY_+++B_C_O_d_l_m+++.docx
2026-03-10 19:01
2017-04-20_发明申请_US20170110504A1 INTEGRATED PIEZOELECTRIC MICROMECHANICAL ULTRASONIC TRANSDUCER PIXEL AND ARRAY_+++A_B_C_D_F_G_H_I_J_L_M_N_O_P_b_e_k_q_r_s+++.docx
2026-03-10 19:01
2017-04-20_发明申请_WO2017066612A1 INTEGRATED PIEZOELECTRIC MICROMECHANICAL ULTRASONIC TRANSDUCER PIXEL AND ARRAY_+++A_B_C_D_G_H_I_L_M_N_e_f_j_o_p_r_s+++.docx
2026-03-10 19:01
2018-06-08_发明公开_CN108140115A 集成的压电微机械超声换能器像素和阵列_+++A_B_C_D_E_G_H_I_J_L_M_N_O_f_p_r_s+++.docx
2026-03-10 19:01
2018-06-12_发明授权_US09995821B2 Active beam-forming technique for piezoelectric ultrasonic transducer array_+++B_C+++.docx
2026-03-10 19:01
2018-06-18_发明公开_KR20180066096A 통합된 압전 마이크로기계식 초음파 트랜스듀서 픽셀 및 어레이_+++A_B_C_D_E_F_G_H_I_J_L_M_N_O_P_Q_R_S+++.docx
2026-03-10 19:01
2018-06-19_发明授权_US10001552B2 Three-port piezoelectric ultrasonic transducer_+++A_B_C_D_E_F_G_H_I_J_K_L_M_N_O_P_Q_R_S_T+++.docx
2026-03-10 19:01
2018-11-27_发明授权_US10139479B2 Superpixel array of piezoelectric ultrasonic transducers for 2-D beamforming_+++B_C_O_e_h_i+++.docx
2026-03-10 19:01
EP3362943A1_Description_20260304_2047_+++A_B_C_D_E_F_G_H_I_J_L_M_N_P_k_o+++.docx
2026-03-10 19:01
WO2016061410A1_Description_20260304_2047_+++A_B_C_D_F_G_I_J_K_L_M_N_O_P_Q_R_S_T_e_h+++.docx
2026-03-10 19:01
无说明书_+++B_C_O_d_n_p+++.docx
2026-03-10 19:01
2016-04-21_发明申请_US20160107194A1 THREE-PORT PIEZOELECTRIC ULTRASONIC TRANSDUCER_+++A_B_C_D_E_F_G_H_I_J_K_L_M_N_O_P_Q_R_S_T+++.docx

**对比文件名称:** 2016-04-21_发明申请_US20160107194A1 THREE-PORT PIEZOELECTRIC ULTRASONIC TRANSDUCER

**目标专利名称:** 217三端口压电超声换能器CN107107114B

**本次调用的模型名称:** 深度思考的专利创造性评估模型

## 特征比对表格

技术特征描述及公开性判断对比文件原文引用公开性论述
**技术特征A《直接公开》**<br>在第一时间段期间,响应于来自收发器电路的信号,借助于压电微机械超声换能器PMUT的第一电极发射第一超声信号。[0007] “...transmitting, during a first time period, responsive to signals from transceiver circuitry, first ultrasonic signals by way of a first electrode of a piezoelectric micromechanical ultrasonic transducer (PMUT)...”对比文件第[0007]段明确记载了在第一时间段,响应于来自收发器电路的信号,通过PMUT的第一电极发射第一超声信号。这与目标专利特征A的技术方案完全一致。
**技术特征B《直接公开》**<br>所述PMUT包含安置于腔上方的膜片。[0007] “...the PMUT including a diaphragm disposed over a cavity...”对比文件第[0007]段明确记载了PMUT包含一个安置于腔上方的膜片。这与目标专利特征B的技术方案完全一致。
**技术特征C《直接公开》**<br>所述膜片包含压电层堆叠。[0063] “...the diaphragm including a piezoelectric layer stack...”对比文件第[0063]段明确记载了膜片包含压电层堆叠。这与目标专利特征C的技术方案完全一致。
**技术特征D《直接公开》**<br>所述压电层堆叠包含压电层、所述第一电极和第二电极。[0063] “...the piezoelectric layer stack including a piezoelectric layer... An inner electrode 413 is disposed above the piezoelectric layer 415... an outer electrode 414 is also disposed above the piezoelectric layer 415.”对比文件第[0063]段结合附图4A-4B明确公开了压电层堆叠包含压电层、内电极(第一电极的实例)和外电极(第二电极的实例)。这与目标专利特征D的技术方案完全一致。
**技术特征E《直接公开》**<br>所述第一电极与所述收发器电路的第一部分电耦合。[0064] “...transceiver circuitry 510 may be electrically coupled with piezoelectric ultrasonic transducer 400 by way of... a second terminal or port is electrically coupled with the inner (transmit) electrode 413...”对比文件第[0064]段描述了收发器电路通过其第二端口与内电极(即第一电极的实例)电耦合。端口即代表收发器电路的不同功能部分。因此,第一电极与收发器电路的第一部分(发射部分)电耦合被直接公开。
**技术特征F《直接公开》**<br>所述第一电极和所述第二电极中的每一者安置于所述压电层的第一表面上或附近。[0009] “...each of the first electrode and the second electrode is disposed on or proximate to a first surface of the piezoelectric layer...”对比文件第[0009]段明确记载了第一电极和第二电极中的每一者都安置于压电层的第一表面上或附近。这与目标专利特征F的技术方案完全一致。
**技术特征G《直接公开》**<br>所述第一表面与所述腔对置。[0009] “...the first surface being opposite from the cavity.”对比文件第[0009]段明确记载了该第一表面与腔对置。这与目标专利特征G的技术方案完全一致。
**技术特征H《直接公开》**<br>在第二时间段期间,借助于所述第二电极接收第二超声信号,所述第二电极与所述收发器电路的第二且不同的部分电耦合。[0007] “...receiving, during a second time period, second ultrasonic signals by way of the second electrode.”<br>[0064] “...a third terminal or port is electrically coupled with the outer (receive) electrode(s) 414.”对比文件第[0007]段明确记载了在第二时间段通过第二电极接收第二超声信号。第[0064]段进一步明确该第二电极(外电极)与收发器电路的第三端口(即接收部分)耦合,该部分与连接第一电极的第二端口(发射部分)不同。因此,技术特征H被直接公开。
**技术特征I《直接公开》**<br>其进一步包括同时地借助于所述第一电极发射所述第一超声信号并借助于所述第二电极接收所述第二超声信号。[0008] “...the PMUT may be configured to simultaneously transmit first ultrasonic signals by way of the first electrode and to receive second ultrasonic signals by way of the second electrode.”对比文件第[0008]段明确记载了PMUT可以被配置为同时通过第一电极发射超声信号并通过第二电极接收超声信号。这与目标专利特征I的技术方案完全一致。
**技术特征J《直接公开》**<br>所述第一电极安置于所述膜片的内部部分中,且所述第二电极安置于所述膜片的外部部分中,所述外部部分接近于所述腔的壁且处在所述壁与所述第一电极之间。[0009] “The first electrode may be disposed in an inner portion of the diaphragm and the second electrode is disposed in an outer portion of the diaphragm, the outer portion being proximal to a wall of the cavity and between the wall and the first electrode.”<br>[0067] “...inner electrode 413 and outer electrode 414 shown on opposite sides of the inflection zone.”对比文件第[0009]段明确、直接地公开了第一电极位于膜片内部部分,第二电极位于膜片外部部分,且外部部分接近腔壁并位于壁与第一电极之间。第[0067]段结合附图5进一步确认了此布局。因此,技术特征J被直接公开。
**技术特征K《直接公开》**<br>其中所述第二电极的一部分延伸超出所述腔的所述壁。[0009] “In some examples, a portion of the second electrode may extend beyond the wall of the cavity.”<br>[0068] “An outer edge of the outer electrode 414 may be substantially aligned with a perimeter of the cavity 420 or may (as illustrated) extend beyond the walls of the cavity 420.”对比文件第[0009]段明确描述了第二电极的一部分可以延伸超出腔壁。第[0068]段结合附图进一步确认了这种配置。因此,技术特征K被直接公开。
**技术特征L《直接公开》**<br>其中所述膜片包含第三电极,所述第三电极安置于所述压电层与所述腔之间。[0009] “In some examples, the diaphragm includes a third electrode, the third electrode being disposed between the piezoelectric layer and the cavity.”对比文件第[0009]段明确记载了膜片可以包含一个安置于压电层与腔之间的第三电极。这与目标专利特征L的技术方案完全一致。
**技术特征M《直接公开》**<br>其中所述第三电极被配置为与所述第一电极和所述第二电极中的每一者一样的参考电极。[0009] “In some examples, the third electrode may be configured as a reference electrode in common with each of the first electrode and the second electrode.”对比文件第[0009]段明确记载了第三电极可以被配置为与第一电极和第二电极共用的参考电极。这与目标专利特征M的技术方案完全一致。
**技术特征N《直接公开》**<br>其中所述参考电极的电压箝位到接地或其它参考电压。[0009] “In some examples, a voltage of the reference electrode may be clamped to ground or other reference voltage.”对比文件第[0009]段明确记载了参考电极的电压可以箝位到接地或其他参考电压。这与目标专利特征N的技术方案完全一致。
**技术特征O《直接公开》**<br>所述膜片受锚定结构支撑并在所述腔上方延伸,所述膜片经配置以在所述PMUT接收或发射超声信号时,经历挠曲运动和振动中的一者或两者并在第一挠曲模式中操作。[0010] “...the diaphragm may be supported by an anchor structure and may extend over the cavity, the diaphragm being configured to undergo one or both of flexural motion and vibration and operate in a first flexural mode when the PMUT receives or transmits ultrasonic signals.”对比文件第[0010]段明确记载了膜片由锚定结构支撑并在腔上方延伸,且被配置为当PMUT接收或发射超声信号时,经历挠曲运动和/或振动并在第一挠曲模式中操作。这与目标专利特征O的技术方案完全一致。
**技术特征P《直接公开》**<br>其中,在所述第一挠曲模式中,所述第一电极和所述第二电极中的每一者经历包含拉伸和压缩应力的交替周期的相应的第一振荡负载循环和第二振荡负载循环。[0010] “...in the first flexural mode, each of the first and second electrodes may experience a respective first and second oscillating load cycle that includes alternating periods of tensile and compressive stress.”对比文件第[0010]段明确记载了在第一挠曲模式中,第一和第二电极各自经历包含拉伸和压缩应力交替周期的振荡负载循环。这与目标专利特征P的技术方案完全一致。
**技术特征Q《直接公开》**<br>其中所述第一振荡负载循环和所述第二振荡负载循环大致同相。[0010] “In some examples, the first and second oscillating load cycles may be approximately in phase.”对比文件第[0010]段明确记载了第一和第二振荡负载循环可以大致同相。这与目标专利特征Q的技术方案完全一致。
**技术特征R《直接公开》**<br>其中所述第一振荡负载循环和所述第二振荡负载循环异相。[0010] “In some examples, the first and second oscillating load cycles may be out of phase.”对比文件第[0010]段明确记载了第一和第二振荡负载循环可以异相。这与目标专利特征R的技术方案完全一致。
**技术特征S《直接公开》**<br>其中所述第一振荡负载循环和所述第二振荡负载循环异相180°。[0010] “In some examples, the first and second oscillating load cycles may be 180° out of phase.”对比文件第[0010]段明确记载了第一和第二振荡负载循环可以异相180°。这与目标专利特征S的技术方案完全一致。
**技术特征T《直接公开》**<br>其中所述第二电极经配置以在所述第一时间段期间处于发射模式中且在所述第二时间段期间处于接收模式中。[0011] “In some examples, the second electrode may be configured to be in a transmit mode during the first time period and in a receive mode during the second time period.”对比文件第[0011]段明确记载了第二电极可以被配置为在第一时间段处于发射模式,在第二时间段处于接收模式。这与目标专利特征T的技术方案完全一致。

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