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对比文件列表
2000-02-29_JP2000061677A_发明专利_JP2000061677A Method and device for laser beam cutting_+++A_B_I_K+++.docx
2026-07-03 01:17
2000-06-20_JP2000167681A_发明专利_JP2000167681A Laser cutting substrate, liquid crystal display panel and manufacture of the panel_+++A_B_I_K_l+++.docx
2026-07-03 01:17
2000-07-05_KR1020000038519A_发明公开_KR1020000038519A 레이저 커팅 설비_+++I_K_l+++.docx
2026-07-03 01:17
2001-02-27_JP2001056455A_发明专利_JP2001056455A Liquid crystal display device panel_+++A_B_I_K_l+++.docx
2026-07-03 01:17
2001-03-23_JP2001077506A_发明专利_JP2001077506A Board for laser cutting and liquid crystal display unit panel constituted of the board for laser cutting_+++A_B_I_K+++.docx
2026-07-03 01:17
2001-10-02_US6297869B_发明授权_US06297869B1 Substrate and a liquid crystal display panel capable of being cut by using a laser and a method for manufacturing the same_+++A_B_I_K_l+++.docx
2026-07-03 01:17
2003-06-17_US6580489B_发明授权_US06580489B2 Liquid crystal display panel and a substrate capable of being cut by a laser light_+++a_b_i_k+++.docx
2026-07-03 01:17
2003-11-13_US2003209528A_发明申请_US20030209528A1 Laser cutting apparatus and method_+++A_B_D_I_K_l+++.docx
2026-07-03 01:17
2004-04-06_US6717101B_发明授权_US06717101B2 Method and apparatus for laser ablation of a target material_+++A_B_E_I_J_L+++.docx
2026-07-03 01:17
2004-11-23_US6822725B_发明授权_US06822725B2 Liquid crystal display substrates integrated by sealant formed inside cutting lines_+++A_B_I_K_l+++.docx
2026-07-03 01:17
2005-03-31_JP2005081715A_发明专利_JP2005081715A Laser beam machining apparatus and laser beam machining method_+++A_I_J+++.docx
2026-07-03 01:17
2005-07-14_JP2005189530A_发明专利_JP2005189530A Lamination type polarizing plate and its manufacturing method_+++D_F_G_I_L_M_N_k+++.docx
2026-07-03 01:17
2006-02-15_CN1733415A_发明公开_CN1733415A 激光加工方法_+++A_B_I_J_L_d+++.docx
2026-07-03 01:17
2006-02-16_US2006035411A_发明申请_US20060035411A1 Laser processing method_+++A_B_D_I_J_L+++.docx
2026-07-03 01:17
2006-02-23_JP2006051517A_发明专利_JP2006051517A Laser beam machining method_+++A_B_C_D_I_J_L+++.docx
2026-07-03 01:17
2006-05-11_US2006098155A_发明申请_US20060098155A1 Substrate and a liquid crystal display panel capable of being cut by using a laser and a method for manufacturing the same_+++A_B_I_K_l+++.docx
2026-07-03 01:17
2006-10-26_JP2006289388A_发明专利_JP2006289388A Apparatus for laser beam machining_+++A_B_I_J+++.docx
2026-07-03 01:17
2007-05-23_CN1966198A_发明公开_CN1966198A 激光加工装置_+++A_B_D_I_J_L+++.docx
2026-07-03 01:17
2008-03-01_TW200810868A_发明专利_TW200810868A 光學薄膜之切斷方法及光學薄膜_+++D_F_I_K_L_N+++.docx
2026-07-03 01:17
2008-03-06_JP2008051964A_发明专利_JP2008051964A Method for cutting optical film, and the optical film_+++D_F_I_K_L_N+++.docx
2026-07-03 01:17
2009-03-04_JP4233999B_发明专利_JP4233999B2 Stacked polarizing plate and a method for manufacturing_+++D_G_I_L_N_f+++.docx
2026-07-03 01:17
2009-08-12_CN101505909A_发明公开_CN101505909A 光学膜的切割方法及光学膜_+++D_F_I_K_L+++.docx
2026-07-03 01:17
2009-10-05_KR1020090103991A_发明公开_KR1020090103991A 광학 필름의 절단 방법 및 광학 필름_+++D_F_I_K_L_N+++.docx
2026-07-03 01:17
2010-04-02_JP2010072414A_发明专利_JP2010072414A Optical film, method for manufacturing optical film, and polarizing plate_+++F_I_J_K_m+++.docx
2026-07-03 01:17
2010-06-16_CN1966198B_发明授权_CN1966198B 激光加工装置_+++A_B_D_I_J_c+++.docx
2026-07-03 01:17
2011-07-21_KR1020110083881A_发明公开_KR1020110083881A 편광판 절단 방법_+++F_I_K+++.docx
2026-07-03 01:17
2011-11-02_JP4808106B_发明专利_JP4808106B2 Cutting method of optical film_+++D_F_I_K_L_N+++.docx
2026-07-03 01:17
2012-01-05_US2012000894A_发明申请_US20120000894A1 PRECISION LASER SCORING_+++A_B_D_I_K_L+++.docx
2026-07-03 01:17
2012-02-02_WO2012014639A_发明申请_WO2012014639A1 偏光板切断方法および当該方法によって切断された偏光板_+++D_F_I_K_M+++.docx
2026-07-03 01:17
2012-02-16_JP2012030243A_发明专利_JP2012030243A Method for cutting polarizing plate, and polarizing plate cut by the method_+++F_I_K_M_d+++.docx
2026-07-03 01:17
2012-06-01_TW201221262A_发明专利_TW201221262A 雷射切割裝置及具備該雷射切割裝置之切條機 LASER CUTTER AND SLITTER PROVIDED WITH THE LASER CUTTER_+++F_I_K_M_l+++.docx
2026-07-03 01:17
2012-09-13_JP2012521339A_发明专利_JP2012521339A Precision laser scoring_+++A_B_D_I_K_L_f+++.docx
2026-07-03 01:17
2012-09-19_CN102686354A_发明公开_CN102686354A 精密激光刻痕_+++A_B_I_K_L+++.docx
2026-07-03 01:17
2013-04-17_CN103052464A_发明公开_CN103052464A 偏振片的切割方法以及使用该方法切割的偏振片_+++D_F_I_K_M+++.docx
2026-07-03 01:17
2013-09-11_CN101505909B_发明授权_CN101505909B 光学膜的切割方法_+++D_F_I_K_L_N+++.docx
2026-07-03 01:17
2013-12-02_KR1020130130692A_发明公开_KR1020130130692A 편광판 절단 방법 및 상기 방법에 의해 절단된 편광판_+++F_I_M_k+++.docx
2026-07-03 01:17
2014-04-23_JP5481300B_发明专利_JP5481300B2 Polarizing plate that has been cut by the polarizing plate cutting method and the method_+++D_F_I_K_M+++.docx
2026-07-03 01:17
2014-07-02_CN103907051A_发明公开_CN103907051A 光学显示设备的生产系统以及生产方法_+++I_k_l+++.docx
2026-07-03 01:17
2014-09-01_TW201433393A_发明专利_TW201433393A 雷射加工裝置及雷射加工方法_+++I+++.docx
2026-07-03 01:17
2004-04-06_US6717101B_发明授权_US06717101B2 Method and apparatus for laser ablation of a target material_+++A_B_E_I_J_L+++.docx

对比文件名称:2004-04-06_US6717101B_发明授权_US06717101B2 Method and apparatus for laser ablation of a target material

目标专利名称:1663用于切割偏光板的方法以及使用该方法切割的偏光板CN106687249B

本次调用的模型名称:GPT-4

## 特征比对表格

技术特征描述及公开性判断结果对比文件原文引用(中文翻译)公开性论述
技术特征A:其中激光束的形状为椭圆形状《直接公开》【SUMMARY OF THE INVENTION】部分:“The laser beam is focussed to an illumination area (also referred hereafter as a “spot”) shaped and dimensioned to include a major axis and a minor axis.”(激光束被聚焦成一个照明区域(以下也称为“光斑”),其形状和尺寸包括长轴和短轴。)<br>【SUMMARY OF THE INVENTION】部分:“The laser pulses are focused into an elongated orientation, such as preferably a line or ellipse with an optical focusing apparatus such as a cylindrical lens pair.”(激光脉冲被聚焦成细长方向,例如优选为线形或椭圆形,使用诸如柱面透镜对的光学聚焦装置。)<br>【DETAILED DESCRIPTION OF THE INVENTION】部分:“The spatial profile 72 (i.e. the “line focus”) of the focused beam 100 is shown in FIG. 4A. The spatial profile 72 preferably has a substantially elliptical shape, having major axis 80 with length L and a minor axis 82 with maximum width W.”(聚焦光束100的空间轮廓72(即“线聚焦”)如图4A所示。空间轮廓72优选为基本上椭圆形,具有长度为L的长轴80和最大宽度为W的短轴82。)对比文件明确公开了激光束的形状为椭圆形(或线聚焦,其本质为椭圆),因此本领域技术人员能够毫无疑义地确定该技术特征。
技术特征B:所述椭圆形状的长轴与切割方向平行《直接公开》【SUMMARY OF THE INVENTION】部分:“the major axis of the illumination area moves or is moved parallel to the cutting direction.”(照明区域的长轴相对于切割方向平行移动或带动其平行移动。)<br>【SUMMARY OF THE INVENTION】部分:“the target material is moved in the same direction as the elongated focus, such as substantially parallel to the line focus in the preferred embodiment.”(目标材料在与细长聚焦相同的方向上移动,例如在优选实施例中基本平行于线聚焦。)<br>【DETAILED DESCRIPTION OF THE INVENTION】部分:“Line focus 72 moves in cutting direction 81 relative to the material surface.”(线聚焦72相对于材料表面沿切割方向81移动。)对比文件直接阐述了椭圆(线聚焦)的长轴平行于切割方向移动,该特征与目标专利中的作用相同,均可实现沿长轴方向切割,因此直接公开。
技术特征C:其中,所述椭圆形状具有1:0.6至1:0.4的长轴对短轴的比率《未公开》【DETAILED DESCRIPTION OF THE INVENTION】部分:“the ratio of length to width (major axis to minor axis) is preferably selected to be 4 or greater.”(长宽比(长轴与短轴之比)优选选择为4或更大。)<br>【EXAMPLE 1】表1中给出了椭圆光斑尺寸“36 by 730”(短轴36微米,长轴730微米,长宽比约20.3:1)和“41 by 580”(长宽比约14.1:1)。对比文件明确教导长轴与短轴之比应≥4,而目标专利限定的比率为1:0.6至1:0.4(即长轴/短轴范围为1.67至2.5),两者完全不重叠,且对比文件并未给出任何关于该较小比率的暗示或教导,因此既未直接公开,也不满足隐含公开的宽松标准。
技术特征D:其中,所述激光束具有100毫米/秒至1,000毫米/秒的切割速度《未公开》【EXAMPLE 1】表1中最大切割速度(Cut Rate)为0.28 mm/sec(355 nm, 0.67 mJ, 300 Hz, 36×730 椭圆光斑),其他远低于100 mm/s。<br>【DETAILED DESCRIPTION OF THE INVENTION】部分:“the translation stages … move the target material parallel to the major or long axis of the line focus at a constant speed that just allows the penetration.”(平移台……以刚好允许穿透的恒定速度使目标材料平行于线聚焦的长轴移动。)对比文件没有给出任何100‑1000 mm/s的切割速度数值或范围,其实施例中的速度均低于1 mm/s,与本技术特征相差悬殊,本领域技术人员无法合理推知该速度范围,因此未公开。
技术特征E:其中,所述激光束具有在5mJ至7mJ的范围内的脉冲能量《直接公开》【SUMMARY OF THE INVENTION】部分:“the pulse energy is preferably between about 0.1 milliJoules and about 250 milliJoules.”(脉冲能量优选介于约0.1毫焦耳和约250毫焦耳之间。)<br>【EXAMPLE 1】表1中第一行:“Wavelength: 355 nm, Pulse Energy: 5.0 mJ”。对比文件公开了一个包含5‑7 mJ的宽范围(0.1‑250 mJ),并且具体给出了落入该范围的示例值5.0 mJ,本领域技术人员能够毫无疑义地得出激光束可以使用该范围内的脉冲能量,因此直接公开。
技术特征F:其中,所述偏光板包括基于环烯烃的薄膜作为光学膜《未公开》全文未涉及偏光板、基于环烯烃的薄膜(COP薄膜)或类似内容。对比文件涉及半导体基底的激光烧蚀,切割对象为半导体封装材料、硅、砷化镓等,完全没有提及偏光板及其包含的环烯烃薄膜,因此未公开。
技术特征G:所述切割方向是与偏光板的拉伸方向相同的方向或是与偏光板的拉伸方向垂直的方向《未公开》全文未提及偏光板的拉伸方向或切割方向与拉伸方向的关系。对比文件未涉及偏光板制造,未对拉伸方向与切割方向的关系作任何记载或暗示,因此未公开。
技术特征H:在所述偏光板的切割表面上形成的锥度具有80微米至120微米的尺寸《未公开》全文未提及锥度尺寸或类似参数。对比文件完全没有讨论切割后锥度的尺寸范围,因此未公开。
技术特征I:其中,所述激光为CO2激光或UV激光《直接公开》(UV激光部分)【SUMMARY OF THE INVENTION】部分:“generating ultraviolet light output pulses.”(产生紫外光输出脉冲。)<br>【DETAILED DESCRIPTION OF THE INVENTION】部分:“the output beam 64 … third harmonic at 355 nanometers.”(输出束64……三次谐波为355纳米。)对比文件明确使用UV激光(355 nm),而权利要求I为CO2激光或UV激光的选择,因此公开了UV激光这一选项,特征被直接公开。
技术特征J:其中,所述UV激光具有300纳米至400纳米的波长《直接公开》【DETAILED DESCRIPTION OF THE INVENTION】部分:“the third harmonic at 355 nanometers.”(三次谐波为355纳米。)对比文件所采用的UV激光波长为355 nm,完全落入300‑400 nm范围,因此直接公开。
技术特征K:其中,所述CO2激光具有9.0微米至10.9微米的振荡波长《未公开》全文未提及CO2激光或9.0‑10.9μm波长范围。对比文件未涉及CO2激光,因此未公开。
技术特征L:其中,使用激光切割偏光板通过单一切割系统或多重切割系统执行《直接公开》【DETAILED DESCRIPTION OF THE INVENTION】部分:“the target material is moved in a desired fashion, resulting in a cut pattern corresponding to the motion of the target material.”(目标材料以期望的方式移动,产生与目标材料运动对应的切割图案。)——体现了单一切割(连续移动)。<br>【DETAILED DESCRIPTION OF THE INVENTION】部分:“the target material can be held stationary until the beam first penetrates, then the translation stages can be moved to a new cutting location while the beam is shuttered off, producing discrete cuts, that optionally can overlap, creating a longer cut.”(目标材料可保持静止直到光束首次穿透,然后平移台移动到新的切割位置,同时光束被遮挡,产生离散的切割,这些切割可选地重叠以形成更长的切割。)——体现了多重切割(离散切割重叠)。对比文件公开了通过连续移动实现单一切割以及通过离散切割重叠实现多重切割的具体实施方式,因此直接公开了技术特征L。
技术特征M:其中,所述基于环烯烃的薄膜具有10微米至80微米的厚度《未公开》全文未涉及基于环烯烃的薄膜及其厚度。对比文件未记载该材料及其厚度,因此未公开。
技术特征N:其中,所述偏光板具有50微米至250微米的厚度《未公开》全文未涉及偏光板及其厚度。对比文件未涉及偏光板的厚度范围,因此未公开。

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