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对比文件列表
2001-09-07_JP2001244123A_发明专利_JP2001244123A Surface-mounted planar magnetic element and method of manufacturing_+++A_B_E_F_G_I_Q_c_d_k_m+++.docx
2026-03-24 23:32
2002-09-27_JP2002280878A_发明专利_JP2002280878A Electronic circuit unit_+++A_B_F_G_I_Q_h_o+++.docx
2026-03-24 23:32
2003-02-28_JP2003059744A_发明专利_JP2003059744A Manufacturing method of inductor_+++A_G_I_J_h_k_l_o_q+++.docx
2026-03-24 23:32
2004-02-05_JP2004039867A_发明专利_JP2004039867A Multilayer wiring circuit module and its manufacturing method_+++A_Q_b_g_i_j_n_o_p+++.docx
2026-03-24 23:32
2005-01-13_US2005006752A_发明申请_US20050006752A1 Multi-layer interconnection circuit module and manufacturing method thereof_+++A_B_E_G_I_J_L_P_Q_c_f_k_o+++.docx
2026-03-24 23:32
2005-03-04_KR1020050020739A_发明公开_KR1020050020739A 다층 배선 회로 모듈 및 그 제조 방법_+++A_E_G_L_O_P_Q_b_c_d_f_i_j_k_n+++.docx
2026-03-24 23:32
2005-09-02_JP2005230076A_发明专利_JP2005230076A Hair dryer_+++g_i_q+++.docx
2026-03-24 23:32
2006-01-04_CN1716467A_发明公开_CN1716467A 薄膜线圈及其制造方法、线圈构造体及其制造方法_+++A_B_F_G_I_J_c_h_q+++.docx
2026-03-24 23:32
2006-01-19_JP2006019506A_发明专利_JP2006019506A Thin film coil, its manufacturing method, coil structure, and its manufacturing method_+++A_B_F_G_J_M_c_i_q+++.docx
2026-03-24 23:32
2006-06-07_EP1665297A_发明公开_EP1665297A2 DSL MODEM AND TRANSFORMER_+++A_B_F_G_c_h_i_q+++.docx
2026-03-24 23:32
2006-06-15_US2006125083A_发明申请_US20060125083A1 Multi-layer interconnection circuit module and manufacturing method thereof_+++A_B_P_Q_c_d+++.docx
2026-03-24 23:32
2006-10-01_TW200635456A_发明专利_TW200635456A 內埋元件的基板之製造方法 METHOD OF FABRICATING A DEVICE-CONTAINING SUBSTRATE_+++I_J_P_a_b_c_d_f_q+++.docx
2026-03-24 23:32
2006-11-22_CN1868009A_发明公开_CN1868009A 数字用户线路调制解调器和变压器_+++A_B_F_G_K_c_d_h_i_j_l_o_p_q+++.docx
2026-03-24 23:32
2007-01-04_US2007001794A_发明申请_US20070001794A1 Dsl modem and transformer_+++A_B_F_G_Q_h_i_j_p+++.docx
2026-03-24 23:32
2007-03-15_JP2007506263A_发明专利_JP2007506263A Dsl modem and transformer_+++A_B_F_G_I_Q_c_d_e_h_j_k_o+++.docx
2026-03-24 23:32
2007-11-21_JP4012526B_发明专利_JP4012526B2 Thin film coil and a method of manufacturing the same, as well as the coil structure and a method for manufacturing_+++A_B_C_D_F_G_I_M_j_q+++.docx
2026-03-24 23:32
2008-01-03_US2008001698A_发明申请_US20080001698A1 Integrated inductors_+++A_B_C_I_J_M_P_Q_d_n_o+++.docx
2026-03-24 23:32
2008-10-07_US7432794B_发明授权_US07432794B2 Variable integrated inductor_+++A_B_G_I_J_Q_f_h+++.docx
2026-03-24 23:32
2009-03-04_EP1519414A_发明公开_EP1519414A1 MULTILAYER WIRING CIRCUIT MODULE AND METHOD FOR FABRICATING THE SAME_+++A_B_F_G_Q_c_d_e_i_k_l_p+++.docx
2026-03-24 23:32
2009-03-26_US2009079529A_发明申请_US20090079529A1 INTEGRATED CIRCUIT INCLUDING INDUCTIVE DEVICE AND FERROMAGNETIC MATERIAL_+++A_B_C_F_G_I_J_M_q+++.docx
2026-03-24 23:32
2009-07-01_KR1020090071370A_发明公开_KR1020090071370A 집적 패시브 장치들을 갖는 시스템-인-패키지와 그 제조 방법_+++A_E_Q_b_g_i_l_o_p+++.docx
2026-03-24 23:32
2009-07-01_TW200929491A_发明专利_TW200929491A 具有整合式被動元件的系統級封裝及其方法 SYSTEM-IN-PACKAGE HAVING INTEGRATED PASSIVE DEVICES AND METHOD THEREFOR_+++A_e_f_g_i_q+++.docx
2026-03-24 23:32
2009-07-02_US2009170242A_发明申请_US20090170242A1 System-in-Package Having Integrated Passive Devices and Method Therefor_+++A_B_C_D_E_G_I_J_L_N_O_Q_f+++.docx
2026-03-24 23:32
2009-09-09_CN100538927C_发明授权_CN100538927C 薄膜线圈及其制造方法、线圈构造体及其制造方法_+++A_B_F_G_I_c_j_q+++.docx
2026-03-24 23:32
2010-02-04_US2010026368A_发明申请_US20100026368A1 HIGH Q TRANSFORMER DISPOSED AT LEAST PARTLY IN A NON-SEMICONDUCTOR SUBSTRATE_+++A_B_F_G_H_I_J_K_P_Q_n+++.docx
2026-03-24 23:32
2010-09-30_US2010244193A_发明申请_US20100244193A1 System-in-Package Having Integrated Passive Devices and Method Therefor_+++A_B_F_G_n_o_p_q+++.docx
2026-03-24 23:32
2011-03-03_US2011049687A_发明申请_US20110049687A1 ENCAPSULANT INTERPOSER SYSTEM WITH INTEGRATED PASSIVE DEVICES AND MANUFACTURING METHOD THEREFOR_+++A_B_C_F_G_N_P_Q_d_i_j_o+++.docx
2026-03-24 23:32
2011-04-14_US2011084386A_发明申请_US20110084386A1 Semiconductor Device and Method of Self-Confinement of Conductive Bump Material During Reflow Without Solder Mask_+++l_n_o_q+++.docx
2026-03-24 23:32
2011-05-19_US2011115597A_发明申请_US20110115597A1 TRANSFORMER DEVICES_+++A_B_K_c_d_g_i_j_n_o_p_q+++.docx
2026-03-24 23:32
2011-06-07_US7956603B_发明授权_US07956603B2 Sensor inductors, sensors for monitoring movements and positioning, apparatus, systems and methods therefore_+++A_B_G_I_c_m_q+++.docx
2026-03-24 23:32
2011-06-29_CN102113116A_发明公开_CN102113116A 至少部分安置于非半导体衬底中的高品质因数变压器_+++A_B_G_I_J_L_P_Q_c_d_f_k_n+++.docx
2026-03-24 23:32
2011-10-26_JP4801046B_发明专利_JP4801046B2 Full deterrence type dual-chamber pacing mode_+++a_b_c_g_i_j_l_q+++.docx
2026-03-24 23:32
2011-12-15_JP2011530177A_发明专利_JP2011530177A High q transformer which is at least partially disposed within the non-semiconductor substrate_+++A_B_G_P_Q_c_h_i_j_k_l_n_o+++.docx
2026-03-24 23:32
2012-01-05_US2012002377A_发明申请_US20120002377A1 GALVANIC ISOLATION TRANSFORMER_+++A_B_C_F_G_I_J_K_q+++.docx
2026-03-24 23:32
2012-01-26_WO2012012108A_发明申请_WO2012012108A2 GALVANIC ISOLATION TRANSFORMER_+++A_B_C_F_G_I_K_O_Q_d_j+++.docx
2026-03-24 23:32
2012-03-22_US2012068301A_发明申请_US20120068301A1 MONOLITHIC MAGNETIC INDUCTION DEVICE_+++A_B_G_H_I_K_P_Q_f_j_m+++.docx
2026-03-24 23:32
2012-05-10_JP2012089700A_发明专利_JP2012089700A Planar coil, method of manufacturing the same, and composite planar coil for actuator_+++A_B_C_E_G_Q_d_i+++.docx
2026-03-24 23:32
2012-09-20_US2012235779A_发明申请_US20120235779A1 MICRO COIL APPARATUS AND MANUFACTURING METHODS THEREFOR_+++A_B_G_H_I_J_c_f_k_m_q+++.docx
2026-03-24 23:32
2013-01-03_US2013001735A_发明申请_US20130001735A1 THERMALLY CONDUCTIVE SUBSTRATE FOR GALVANIC ISOLATION_+++A_B_C_F_I_L_g_j_q+++.docx
2026-03-24 23:32
2013-01-30_CN102906833A_发明公开_CN102906833A 电隔离变压器_+++A_B_C_F_G_K_d_i_j_q+++.docx
2026-03-24 23:32
TW201222782A_Description_20260318_1905_+++A_B_I_K_f_g_j_q+++.docx
2026-03-24 23:32
US2001024739A1_Description_20260318_1906_+++A_B_E_F_G_I_K_M_Q_c_d_j+++.docx
2026-03-24 23:32
US2007145568A1_Description_20260318_1905_+++A_B_G_L_P_Q_c_f_i_j_n_o+++.docx
2026-03-24 23:32
WO2005027156A2_Description_20260318_1905_+++A_B_C_E_F_G_H_I_K_O_Q_d_j_l+++.docx
2026-03-24 23:32
2011-05-19_US2011115597A_发明申请_US20110115597A1 TRANSFORMER DEVICES_+++A_B_K_c_d_g_i_j_n_o_p_q+++.docx

对比文件名称:2011-05-19_US2011115597A_发明申请_US20110115597A1 TRANSFORMER DEVICES

目标专利名称:无基板分立耦合电感器结构CN104969312B

本次调用的模型名称:DeepSeek最新版本模型

### 特征比对表格

技术特征描述以及公开性判断结果对比文件原文引用公开性论述
技术特征A:包括第一电感器绕组,其包括导电材料《直接公开》[0014] Inductors 14a, 14b may be fabricated on the substrates 12a, 12b to form traces corresponding to primary and secondary windings of a transformer... [0014] ...first depositing a metal layer on the substrates 12a, 12b... Examples of suitable metals include gold, copper, aluminum...对比文件明确公开了在基板上制造第一和第二电感器(14a, 14b)作为变压器的初级和次级绕组,并且通过沉积金属层(如金、铜、铝)形成。这直接公开了包括导电材料的第一电感器绕组。
技术特征B:第二电感器绕组,其包括导电材料《直接公开》[0014] Inductors 14a, 14b may be fabricated on the substrates 12a, 12b to form traces corresponding to primary and secondary windings of a transformer... [0014] ...first depositing a metal layer on the substrates 12a, 12b... Examples of suitable metals include gold, copper, aluminum...对比文件明确公开了制造两个电感器(14a, 14b),即第一和第二电感器绕组,且均由金属材料制成。这直接公开了包括导电材料的第二电感器绕组。
技术特征C:填充物,其横向位于所述第一电感器绕组与所述第二电感器绕组之间,《隐含公开》[0015] A layer of an electrically non-conductive material 16 may be provided on the first and second inductors 14a, 14b to provide electrical isolation and protection... [0021] ...the juxtaposed portions of the first and second inductors 14a, 14b are separated from one another by a thin layer of the non-conductive layer 16.对比文件公开了在电感器14a, 14b上提供一层非导电材料(16)用于电隔离和保护,并且在将两个基板对置(juxtaposed)后,第一和第二电感器的并置部分由该非导电层(16)隔开。该非导电层位于两个电感器之间,且对比文件图2E-2F显示其横向填充于两个电感器绕组之间。因此,本领域技术人员可以毫无疑义地确定存在横向位于两绕组之间的“填充物”(即非导电材料层)。
技术特征D:所述填充物配置成提供所述第一电感器绕组与所述第二电感器绕组的结构耦合,《隐含公开》[0016] The first and second substrates 12a, 12b of FIG. 2D... may be juxtaposed to form an interleaved arrangement... [0017] With the juxtaposed arrangement, the first and second substrates 12a, 12b may be suitably coupled or bonded to form a unitary structure... Examples of suitable coupling methods include... adhesive bonding. [0021] ...the juxtaposed portions of the first and second inductors 14a, 14b are separated from one another by a thin layer of the non-conductive layer 16.对比文件公开了将两个带有电感器的基板对置并键合(coupled or bonded)形成单一结构(unitary structure),并且两电感器之间夹有非导电层(16)。该非导电层在键合过程中必然起到固定、支撑和隔离两个电感器绕组的作用,从而将它们耦合在一起形成完整的器件结构。虽然对比文件未明确使用“结构耦合”一词,但其描述的键合形成单一结构的过程,隐含了位于中间的填充物(非导电层)是提供这种结构耦合的必要组成部分。
技术特征E:其中所述第一电感器绕组、所述第二电感器绕组和所述填充物没有作为基底部分的基板。《未公开》[0019] ...removing a portion of the first or the second substrate, such as by back grinding, until a thin residual layer 12b″ of the substrate material remains on the structure to protect the inductors 14a, 14b... The residual layer 12b″ may have a thickness substantially lesser than a thickness of the original substrate...目标专利强调“没有作为基底部分的基板”,即完全移除或不存在作为支撑基底的整体基板。对比文件虽然通过减薄(back grinding)使基板变薄为残余层(residual layer),但该残余层(12b″)明确被保留以保护电感器,并作为器件的一部分(参见图3)。因此,对比文件的器件始终存在基板(即使是减薄后的残余层)作为基底部分,这与目标专利“无基板”的核心构思不同,故该特征未被公开。
技术特征F:其特征在于,所述第一电感器绕组与所述第二电感器绕组横向共面。《未公开》[0014] Each of the substrates 12a, 12b... is configured to comprise an inductor... [0016] ...such that the first and the second inductors 14a, 14b form an interleaved arrangement when both substrates are juxtaposed. [0021] ...the first and the second inductors 14a, 14b are interposed between the first and the second substrates 12a, 12b.目标专利的“横向共面”指两个绕组在同一平面内并排设置。对比文件公开的是两个电感器(14a, 14b)分别制作在两个独立的基板(12a, 12b)上,然后面对面(face-to-face)对置并交错(interleaved),两者分别位于两个不同的平面,并被非导电层隔开(参见图2E, 2F, 3, 4)。这种布局是垂直堆叠而非横向共面。因此,该特征未被公开。
技术特征G:其特征在于,所述第一电感器绕组具有第一螺旋形状,并且所述第二电感器绕组具有第二螺旋形状。《隐含公开》[0014] ...Unetched portions of the metal layer form a desired trace arrangement e.g. spiral arrangement. [0024] The planar transformer 10 of FIG. 5 is implemented as two spiral inductors...对比文件[0014]明确提及形成期望的迹线排列,例如螺旋排列(spiral arrangement)。[0024]进一步明确说明图5的平面变压器实现为两个螺旋电感器(two spiral inductors)。因此,本领域技术人员可以直接且毫无疑义地得出第一和第二电感器绕组均具有螺旋形状的结论。
技术特征H:其特征在于,所述第一电感器绕组和所述第二电感器绕组具有拉长的圆形形状。《未公开》[0024] The planar transformer 10 of FIG. 5 is illustrated as having a square spiral arrangement, but may be implemented as other arrangements, e.g., circular, octagonal, rectangular...对比文件仅公开了螺旋形状(spiral arrangement),并举例了方形、圆形、八角形、矩形等可能形状,但并未具体公开或教导“拉长的圆形形状”(例如赛马场形状)。该形状是目标专利中可能的一种具体实施方式,但并非对比文件必然隐含或公开的内容。因此,该特征未被公开。
技术特征I:其特征在于,所述第一电感器绕组包括第一端子和第二端子,并且所述第二电感器绕组包括第三端子和第四端子。《隐含公开》[0017] ...to provide electrical contacts 16 to the inductors 14a, 14b. The electrical contacts 16 are to form separate electrical paths to the inductors 14a, 14b... [0022] Electrical contacts 20 may be provided to the planar transformer device 10 in various ways... In other embodiments, electrical contacts 20 may be located at the ends of the traces...对比文件多次提及为电感器(14a, 14b)提供电触点(electrical contacts)以形成单独的电路径,并且电触点可以位于迹线的末端(ends of the traces)。对于作为绕组/迹线的电感器而言,要形成有效的电路径并与外部连接,必然至少具有两个电连接端(即端子)。本领域技术人员根据对比文件的明确教导,可以毫无疑义地推断出第一电感器绕组具有两个端子(第一端子和第二端子),第二电感器绕组也具有两个端子(第三端子和第四端子)。
技术特征J:其特征在于,所述第一端子耦合至所述第一电感器绕组的第一端,并且所述第二端子耦合至所述第一电感器绕组的第二端。《隐含公开》[0022] ...electrical contacts 20 may be located at the ends of the traces...结合特征I的论述,对比文件明确教导电触点(20)位于迹线(即电感器绕组)的末端(ends)。这意味着每个电感器绕组的两个末端分别连接有电触点(即端子)。因此,可以合理推断第一电感器绕组的第一端连接第一端子,第二端连接第二端子。该特征被隐含公开。
技术特征K:其特征在于,所述第一电感器绕组的厚度小于0.2毫米。《直接公开》[0023] ...a planar transformer may have a trace thickness of about 10 μm to about 15 μm...对比文件[0023]明确记载了平面变压器中迹线(trace,即电感器绕组)的厚度约为10微米(μm)至15微米。10-15微米远小于0.2毫米(200微米)。因此,该厚度特征被对比文件直接公开。
技术特征L:其特征在于,所述填充物为环氧树脂。《未公开》[0015] A layer of an electrically non-conductive material 16 may be provided...对比文件仅泛泛提及“非导电材料”(electrically non-conductive material)用于隔离和保护,并未具体公开该材料是“环氧树脂”。环氧树脂是非导电材料的一种,但对比文件并未限定或暗示必须使用环氧树脂。因此,该具体材料特征未被公开。
技术特征M:其特征在于,所述电感器结构还包括:至少一个铁磁层,其位于与所述填充物相邻。《未公开》无相关描述。对比文件全文未提及在电感器结构中使用或设置任何铁磁层(ferromagnetic layer)。该特征是目标专利可能包含的附加组件,但未在对比文件中公开。
技术特征N:其特征在于,所述电感器结构被集成在层叠封装(PoP)结构上。《隐含公开》[0013] ...the substrates 12a, 12b... may be a package substrate or a die substrate...对比文件指出基板可以是封装基板(package substrate)。层叠封装(PoP)是一种常见的先进封装结构,其包含堆叠的封装基板。本领域技术人员知晓,将器件(如平面变压器)制作在封装基板上是将其集成到PoP结构中的常规技术手段。因此,将对比文件公开的器件集成在PoP结构上,是本领域技术人员基于其公开内容容易想到的常规应用。该特征被隐含公开。
技术特征O:其特征在于,所述电感器结构被集成在封装基板的表面上。《隐含公开》[0013] ...the substrates 12a, 12b... may be a package substrate...对比文件明确公开基板可以是封装基板(package substrate),并且电感器(14a, 14b)制造在该基板上(fabricated on the substrates)。这必然意味着电感器结构被集成在封装基板的表面上。该特征被隐含公开。
技术特征P:其特征在于,所述电感器结构被集成在封装基板内部。《隐含公开》[0013] ...the substrates 12a, 12b... may be a package substrate... The metallization layer(s) may be fabricated prior to fabricating the planar transformer device 10.对比文件公开基板可以是封装基板,并且可以在制造平面变压器器件之前先制造金属化层。本领域技术人员知晓,封装基板通常为多层结构,器件既可以制作在表面,也可以嵌入内部。将对比文件描述的器件制作工艺应用于封装基板的内部层,是本领域的常规技术选择。因此,该特征被隐含公开。
技术特征Q:其特征在于,所述电感器结构被纳入在电子设备中。《隐含公开》[0005] Planar transformers are utilized in wireless communication devices... [0027] Embodiments of the invention may be applicable in a variety of applications, including but not limited to, fast switching power delivery modules for CPU and chipset, and in RF Front End Modules and transceiver chips for wireless communication devices.对比文件[0005]和[0027]明确指出了平面变压器器件在无线通信设备、CPU和芯片组的电源模块、射频前端模块等多种应用和设备中的用途。这表明该电感器结构(即平面变压器)旨在被纳入电子设备中使用。因此,该特征被隐含公开。

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